to-92 l plastic-encapsulate transistors 2SD400 transistor (npn) features low-frequency power amp, electronic governor applications maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 25 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 1 a p c collector power dissipation 0. 75 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 10 a, i e =0 25 v collector-emitter breakdown voltage v (br)ceo i c = 1 ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 5 v collector cut-off current i cbo v cb = 20 v, i e =0 1 a emitter cut-off current i ebo v eb = 4 v, i c =0 1 a h fe(1) v ce = 2 v, i c = 50 ma 60 560 dc current gain h fe(2) v ce = 2 v, i c = 1 a 30 collector-emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50 ma 0.3 v base-emitter saturation voltage v be(sat) i c = 500 ma, i b = 50 ma 1.2 v transition frequency f t v ce = 10 v, i c = 50 ma 180 mhz output capacitance c ob v cb = 10 v, f=1mhz 15 pf classification of h fe(1) rank range 60-120 100-200 200-300 300-400 to-92 l 1. emitter 2. collector 3. base 123 product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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